ULSI Science and Technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and TechnologyHisham Z. Massoud The Electrochemical Society, 1997 - 664 pages |
Contents
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Common terms and phrases
active annealing Appl applied become capacitors cavity channel characteristics circuit cleaning CMOS compared concentration contamination crystal decrease defects density dependence deposition depth device diameter dielectric diffusion dislocations doping drain DRAM edge EEPROM effect electrical Electrochem Electron energy epitaxial etching fabrication field Figure film formation formed gate oxide growth heat higher IEEE implantation important improved increase initial integrated interface interstitial isolation issues junction layer leakage length limit lithography lower material measured mechanism memory metal MOSFET observed obtained oxygen performance Phys polished polysilicon present problem reduced region removal resistance samples scaling selective Semiconductor shown shown in Fig shows silicide silicon simulation SiO2 solution spacer step stress structure substrate surface technique temperature thermal thickness thin threshold transistor values voltage wafer
Popular passages
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Page 349 - ... of the molecules on the inside of the membrane is related to the proportion on the outside, P0 , by where E is the potential difference between the outside and the inside of the membrane, w is the work required to move the molecule from the inside to the outside of the membrane when E = 0, e is the absolute value of the electronic charge, z...