ULSI Science and Technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology

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The Electrochemical Society, 1997 - 664 pages

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Page 607 - S. Takagi, A. Toriumi. M. Iwase, and H. Tango. "On the universality of inversion layer mobility in Si MOSFET's: Part I effects of substrate impurity concentration,
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Page 571 - Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC...
Page 601 - Dipartimento di Elettronica, Informatica e Sistemistica Universita di Bologna, Viale Risorgimento 2...
Page 128 - J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 29, L1947 (1990).
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Page 297 - The improvements were, in fact, caused by surface damage and not specific chemical dopings. The concept of chemical doping by implantation is spelled out in the 1954 patent by Shockley [12.2]. This patent, entitled "Forming Semiconductive Devices by Ionic Bombardment...
Page 349 - ... of the molecules on the inside of the membrane is related to the proportion on the outside, P0 , by where E is the potential difference between the outside and the inside of the membrane, w is the work required to move the molecule from the inside to the outside of the membrane when E = 0, e is the absolute value of the electronic charge, z...

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