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Page 607 - S. Takagi, A. Toriumi. M. Iwase, and H. Tango. "On the universality of inversion layer mobility in Si MOSFET's: Part I — effects of substrate impurity concentration,
Page 647 - Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, JAPAN...
Page 255 - JR Pfiester, FK Baker, TC Mele, HH Tseng, PJ Tobin, JD Hayden, JW Miller, CD Gunderson, and LC Parrillo, "The Effects of boron penetration on p+ polysilicon gated PMOS devices," IEEE Transaction on Electron Devices, vol.
Page 571 - Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC...
Page 601 - Dipartimento di Elettronica, Informatica e Sistemistica Universita di Bologna, Viale Risorgimento 2...
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Page 297 - The improvements were, in fact, caused by surface damage and not specific chemical dopings. The concept of chemical doping by implantation is spelled out in the 1954 patent by Shockley [12.2]. This patent, entitled "Forming Semiconductive Devices by Ionic Bombardment...
Page 349 - ... of the molecules on the inside of the membrane is related to the proportion on the outside, P0 , by where E is the potential difference between the outside and the inside of the membrane, w is the work required to move the molecule from the inside to the outside of the membrane when E = 0, e is the absolute value of the electronic charge, z...