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" J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 29, L1947 (1990). "
ULSI Science and Technology/1997: Proceedings of the Sixth International ... - Page 128
edited by - 1997 - 664 pages
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Proceedings of the Fourth International Symposium on High Purity ..., Volume 3

Cor L. Claeys - 1996 - 606 pages
...H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama, Semicond. Sci. Technol. 7, A 135 (1992). 8. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys. 31, L293 (1992). 9. M. Brohl, D. Graf, P. Wagner, U. Lambert, HA Gerber and H. Piontek, The Electrochem....
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Proceedings of the Electrochemical Society Symposium on Diagnostic ...

P. Rai-Choudhury - 1997 - 496 pages
...estimated to be about 50 to 200nm assuming B-mode defects and grown-in defects are the same. References 1 . J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys., 29, LI 947 (1990). 2. T. Shiota, E. Morita, J. Furukawa, H. Furuya, T. Shingyouji and Y. Shimanuki, Proc....
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Proceedings of the Fifth International Symposium on High Purity Silicon

Cor L. Claeys - 1998 - 498 pages
...M. Suhren, D. Graf, U. Lambert, P. Wagner, The Electrochem. Soc. Proc. Vol. PV 9613, 132 (1996) 11. J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 29, L1947 (1990) O. De Gryse1, P. Clauws1, L. Rossou 2, J. Van Landuyt 2 , J. Vanhellemont3, and W. Mondelaers1 1 University...
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Silicon Materials Science and Technology: Proceedings of the ..., Volume 1

Howard R. Huff, U. Gösele, H. Tsuya - 1998 - 894 pages
...(1993) 3. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys. 29, L1947 (1990) 4. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys. 31, L293 (1992) 5. JJ Shen, LM Cook, KG Pierce and SB Loncki, J. Electrochem. Soc., 143, 2086 (1996)...
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Proceedings of the Third International Symposium on Defects in Silicon

Takao Abe - 1999 - 548 pages
...REFERENCES 1. J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 29, LI 947 (1990). 2. J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 31, L293 (1990). 3. H. Yamagishi, I. Fusegawa, N. Fujimaki, and M. Katayama, Semicon Sci. and Tech....
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High Purity Silicon VII: Proceedings of the International Symposium

Cor L. Claeys - 2002 - 428 pages
...88, 4000 (2000). 4. JG Park, GS Lee, KD Kwack, and JM Park, Jpn. J. Appl. Phys. 39, 197 (2000). 5. J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 29, LI 947 (1990). 6. H.Bender, J.Vanhellemont and R.Schmolke, Jpn. J. Appl. Phys. 36, 1217 (1996). 7....
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Semiconductor Silicon 2002: Proceedings of the Ninth International ..., Volume 1

Howard R. Huff, László Fábry, Seigo Kishino - 2002 - 650 pages
...without void defect. REFERENCES 1. H. Suga, Ext. Abstract 92-2, The Electrochem. Soc. Meeting (1992). 2. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys., 31, L293 (1992). 3. H. Nishikawa, M. Tanaka, T. Ono and M. Horai, Jpn. J. Appl. Phys., 36, 6595 (1997)....
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Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 ...

Mehmet C. Öztürk, Fred Roozeboom - 2004 - 444 pages
...Dornberger, W. von Ammon, J. Virbulis, B. Hanna and T. Sinno, J, Crystal Growth, 230, (2001) 291. 53. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys., 31, (1992) L293. 54. D. Graf, M. Suhren, U. Lambert, R. Schmolke, A. Ehlert, W. von Ammon and P. Wagner,...
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